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US 6,498,369 B1Granted
Electro-optical device and electronic equipment
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hidehito Kitakado, Takeshi Fukunaga
Life of this patent
Estimating the term…
Abstract
An electro-optical device having high operation performance and high reliability, and electronic equipment which include the electro-optical device, are provided. A TFT structure that is strong against hot carrier injection is realized by placing an LDD region which overlaps a gate electrode in an n-channel TFT forming a driver circuit. Furthermore, a TFT structure having a low off current value is realized by placing LDD regions which do not overlap a gate electrode in a pixel TFT forming a pixel section. In addition, the electro-optical device has a memory section on the same insulator, the memory section having a memory transistor and storing data.
Claims95
A display device comprising:
- a driver TFT provided in a driver circuit;
- a pixel TFT provided in a pixel;
- and
- a memory TFT provided in a memory;
- said memory TFT comprising:
- a source region;
- a drain region;
- a channel formation region provided between said source region and said drain region;
- a floating gate electrode provided adjacent to said channel formation region with a first gate insulating film between said channel formation region and said floating gate electrode;
- a control gate electrode provided adjacent to said floating gate electrode with a second gate insulating film between said floating gate electrode and said control gate electrode;
- and
- an LDD region provided between said channel formation region and at least one of said source region and said drain region, wherein
- said LDD region overlaps with said floating gate electrode, and
- said driver circuit, said pixel and said memory are formed over a same insulator.
11 more elements
A display device comprising:
- a driver circuit having an n-channel TFT in which an entire LDD region is formed so as to overlap a gate electrode with a gate insulating film sandwiched therebetween;
- a pixel having a pixel TFT in which an LDD region is formed so as not to overlap a gate electrode with said gate insulating film sandwiched therebetween;
- and
- a memory having a memory transistor, wherein
- said driver circuit, said pixel and said memory are formed over a same insulator.
2 more elements
A display device comprising:
- a driver circuit having an n-channel TFT in which an entire LDD region is formed so as to overlap a gate electrode with a second gate insulating film sandwiched therebetween;
- a pixel having a pixel TFT in which an LDD region is formed so as not to overlap a gate electrode with said second gate insulating film sandwiched therebetween;
- and
- a memory having a memory transistor containing an active layer, a first gate insulating film, a floating gate electrode, a third gate insulating film, and a control gate electrode, wherein
- said driver circuit, said pixel and said memory are formed over a same insulator, and wherein
- said third gate insulating film covers said gate electrode of said n-channel TFT and said gate electrode of said pixel TFT.
3 more elements
A display device comprising:
- a driver circuit having an n-channel TFT in which an entire LDD region is formed so as to overlap a gate electrode with a second gate insulating film sandwiched therebetween;
- a pixel having a pixel TFT in which an LDD region is formed so as not to overlap a gate electrode with said second gate insulating film sandwiched therebetween;
- and
- a memory having a memory transistor containing an active layer, a first gate insulating film, a floating gate electrode, a third gate insulating film, and a control gate electrode, wherein
- said driver circuit, said pixel and said memory are formed over a same insulator, and wherein
- said floating gate electrode, said gate electrode of said n-channel TFT, and said gate electrode of said pixel TFT are made from a same material, and are covered by said third gate insulating film.
3 more elements
A display device comprising:
- a driver circuit having an n-channel TFT in which an entire LDD region is formed so as to overlap a gate electrode with a second gate insulating film sandwiched therebetween;
- a pixel having a pixel TFT in which an LDD region is formed so as not to overlap a gate electrode with said second gate insulating film sandwiched therebetween;
- and
- a memory having a memory transistor containing an active layer, a first gate insulating film, a floating gate electrode, a third gate insulating film, and a control gate electrode, wherein
- said driver circuit, said pixel and said memory are formed over a same insulator, and wherein
- said third gate insulating film comprises an oxide of a material forming said floating gate electrode.
3 more elements
A display device comprising:
- a driver circuit having an n-channel TFT in which an entire LDD region is formed so as to overlap a gate electrode with a second gate insulating film sandwiched therebetween;
- a pixel having a pixel TFT in which an LDD region is formed so as not to overlap a gate electrode with said second gate insulating film sandwiched therebetween;
- and
- a memory having a memory transistor containing an active layer, a first gate insulating film, a floating gate electrode, a third gate insulating film, and a control gate electrode, wherein
- said driver circuit, said pixel and said memory are formed over a same insulator, and wherein
- said floating gate electrode, said gate electrode of said n-channel TFT, and said gate electrode of said pixel TFT are made from a same material, and said third gate insulating film comprises an oxide of a material forming said floating gate electrode.
3 more elements
Dependencies are inferred from the claim text.