Discrete integrated circuit rectifier device
AssigneeAPD Semiconductor, Inc.
InventorsPaul Chang, Geeng-Chuan (aka Michael) Chern, Wayne Y. W. Hsueh, Vladimir Rodov
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AssigneeAPD Semiconductor, Inc.
InventorsPaul Chang, Geeng-Chuan (aka Michael) Chern, Wayne Y. W. Hsueh, Vladimir Rodov
Estimating the term…
A power rectifier having low on resistance, fast recovery time and low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common conductive layer. This provides a low Vf path through the channel regions of the MOSFET cells to the contact metallization on the other side of the integrated circuit. A thin gate structure is formed annularly around pedestal regions on the upper surface of the device and a precisely controlled body implant defines the channel region and allows controllable device characteristics, including gate threshold voltage and Vf.
A discrete integrated circuit rectifier device, comprising:
Dependencies are inferred from the claim text.