US 6,492,669 B2 · Semiconductor device with schottky electrode having high schottky barrier

Abstract

A carrier travel layer is formed on the substrate of a semiconductor device with a buffer layer interposed, and a spacer layer and carrier supply layer are then formed on this carrier travel layer. On the carrier supply layer are provided a source electrode and a drain electrode, and a gate electrode is provided on an interposed Schottky layer. The carrier supply layer is composed of AlGaN and has tensile strain. The Schottky layer is composed of InGaN and has compressive strain. A negative piezoelectric charge is induced on the carrier supply layer side of the Schottky layer, and a positive piezoelectric charge is induced on the opposite side of the Schottky layer, whereby a sufficient Schottky barrier height is obtained and leakage current is suppressed.

Claims20

Dependent claims

A semiconductor device comprising:

a first electron barrier layer;
a second electron barrier layer formed on said first electron barrier layer either directly or on an interposed spacer layer and in which a negative piezoelectric charge is induced on said first electron barrier layer side and a positive piezoelectric charge is induced on the opposite side;
and
a Schottky electrode of sufficient height formed on the side of said second electron barrier layer in which said positive piezoelectric charged is induced.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

09/892,567Filed 28 Jun 2001

Priority

JP 2000-19674929 Jun 2000

Published

US 2002/0017696 A114 Feb 2002

Granted

10 Dec 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/4732
Having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT: using Group III-V semiconductor material
H10D 30/6738
Characterised by the electrode materials: schottky barrier electrodes
H10D 30/675
Characterised by the active materials: group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium

Semiconductor device with schottky electrode having high schottky barrier

Life of this patent

Semiconductor device with schottky electrode having high schottky barrier

Life of this patent

Abstract

Claims20