Film deposition method and apparatus
AssigneeApplied Materials, Inc.
InventorsYuichi Wada, Hiroyuki Yarita, Hisashi Aida, Naomi Yoshida
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Abstract
The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.
Claims17
A film deposition method, comprising a step of barrier metal layer formation on a to-be-processed body;
- and a step of metal layer formation on said barrier metal layer;
- wherein one series of processing that is performed from said barrier metal layer formation up to and including said metal layer formation is performed under an environment shutoff from air,
- said metal layer formation including:
- a first step of preparing a fluid, which contains an organometallic compound as its main component and which precipitates a metal layer material through a pyrolytic decomposition reaction,
- a second step of applying said fluid onto said to-be-processed body at a temperature within the non-reactive range of said organometallic compound;
- and
- a third step of heating said to-be-processed body to a predetermined temperature after said second step, and causing a pyrolytic decomposition reaction of said organometallic compound within said fluid that is applied to said to-be-processed body.
A film deposition apparatus, comprising:
- a first device, which forms a barrier metal layer in an environment that is cut off from air;
- a second device, which forms a metal layer in an environment that is cut off from air;
- and
- a transport pathway, which connects said first device and said second device, and is cut off from air,
- said second device including:
- a supply means for supplying fluid containing an organometallic compound as a main component that precipitates a metal layer material through a pyrolytic decomposition reaction;
- an application means for applying said fluid that is supplied from said supply means onto a to-be-processed body;
- a heating means for heating the to-be-processed body to a predetermined temperature.
A film deposition method comprising a barrier metal layer formation step of forming a barrier metal layer on a to-be-processed body;
- and a copper layer formation step of forming a copper layer on said barrier metal layer,
- said copper layer formation step including:
- a first step of preparing a fluid, which has as a main component an organometallic compound selected from a group consisting of (hfac)Cu+1(tmvs) and (hfac)Cu+1(teovs);
- a second step of applying said fluid onto said to-be-processed body at a temperature within the non-reactive range of said organometallic compound;
- and
- a third step of heating said to-be-processed body to a predetermined temperature after said second step, and causing a pyrolytic decomposition reaction of said organometallic compound within said fluid that is applied onto said to-be-processed body in order to form said copper layer on said to-be-processed body;
- wherein pressure inside a process chamber that heats said to-be-processed body to cause pyrolytic decomposition reaction to occur during said third step is higher than normal atmospheric pressure in order to inhibit natural evaporation of said fluid.
Dependencies are inferred from the claim text.