Semiconductor light emitting device

A semiconductor light emitting device;

• comprising:
• a structure including an active layer between a p-type cladding layer and an n-type cladding layer on a base body, wherein
• at least one of said p-type cladding layer, said n-type cladding layer, and said active layer has a lattice mismatch relative to said base body that is not smaller than −1.5×10−3 and not larger than −2.0×10−4.

A semiconductor light emitting device, comprising:

• a structure including an active layer between a p-type cladding layer and an n-type cladding layer on a base body,
• wherein said p-type cladding layer, said n-type cladding layer and said active layer are in lattice mismatch with said base body,
• wherein said lattice mismatch is not smaller than −1.5×10−3 and not larger than −2.0×10−4.

In an optical recording and/or reproducing apparatus using as a light source thereof a semiconductor light emitting device, the semiconductor light emitting device comprising:

• a structure including an active layer between a p-type cladding layer and an n-type cladding layer on a base body, wherein
• at least one of said p-type cladding layer and said n-type cladding layer has a lattice mismatch relative to said base body that is not smaller than −1.5×10−3 and not larger than −2.0×10−4.

An optical recording and/or reproducing apparatus using as a light source thereof a semiconductor light emitting device, the optical recording and/or reproducing apparatus comprising:

• a structure including an active layer between a p-type cladding layer and an n-type cladding layer on a base body, wherein
• at least one of said p-type cladding layer, said n-type cladding layer, and said active layer has a lattice mismatch relative to said base body that is not smaller than −1.5×10−3 and not larger than −2.0×10−4.