Semiconductor memory device having a second voltage supplier supplying transfer gates with a second voltage higher than a first voltage
AssigneeFujitsu Limited
InventorsHiroyoshi Tsuboi, Shinya Fujioka, Koichi Nishimura
Life of this patent
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Abstract
A semiconductor memory device which includes at least two memory cell arrays, a sense amplifier shared by the memory cell arrays and at least two transfer gates connected respectively between each of the memory cell arrays and the sense amplifier. The semiconductor memory device further includes a first voltage supplier supplying a first voltage to the transfer gates, and a second voltage supplier supplying a second voltage to the transfer gates, with second voltage being higher than the first voltage.
Claims10
A semiconductor memory device comprising:
- at least two memory cell arrays;
- a sense amplifier shared by said memory cell arrays;
- at least two transfer gates connected respectively between each of said memory cell arrays and said sense amplifier;
- a first precharge voltage supplier supplying a first precharge voltage to said transfer gates;
- and
- a second precharge voltage supplier supplying a second precharge voltage to said transfer gates, the second precharge voltage being higher than said first precharge voltage.
A method of testing a semiconductor memory device including at least two memory cell arrays, a sense amplifier shared by said memory cell arrays, and at least two transfer gates connected respectively between each of said memory cell arrays and said sense amplifier, the method comprising the step of:
- supplying said transfer gates with a higher precharge voltage in a test than a precharge voltage supplied in a normal operation.
Dependencies are inferred from the claim text.