Method of programming a non-volatile memory cell using a vertical electric field
AssigneeAdvanced Micro Devices, Inc.
InventorsTimothy J. Thurgate, Carl R. Huster
Life of this patent
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Abstract
A method of programming a memory cell with a substrate that includes a first region and a second region with a channel therebetween and a gate above the channel, and a charge trapping region that contains a first amount of charge. The method includes applying a lateral electric field within the channel that generates a depletion layer that has electrons at a bottom portion of the depletion layer and applying a vertical electric field within the channel that has a sufficient strength so that the electrons at the bottom portion of the depletion layer are injected into the charge trapping region.
Claims11
A method of programming a memory cell with a substrate that comprises a first region and a second region with a channel therebetween and a gate above said channel, and a charge trapping region that contains a first amount of charge, the method comprising:
- applying a lateral electric field within said channel that generates a depletion layer that has electrons at a bottom portion of said depletion layer;
- applying a negative bias to a drain region, said negative bias having a sufficient strength so that electrons are injected into said channel from said second region;
- and
- applying a vertical electrical field within said channel that has a sufficient strength so that said electrons at said bottom portion of said depletion layer are injected into said charge trapping region.
Dependencies are inferred from the claim text.