Oxide protection for a booster circuit
AssigneeFujitsu Limited
InventorTakao Akaogi
Life of this patent
Estimating the term…
Loading patent…
AssigneeFujitsu Limited
InventorTakao Akaogi
Estimating the term…
A protection system that protects a booster circuit used to boost operating signals in a memory device. The system includes a protection circuit for protecting an output transistor of the booster circuit. The protection circuit includes a transfer gate coupled to the output transistor and coupled to receive a first boost signal and a second boost signal. The transfer gate opens and closes in response to the second boost signal. When the transfer gate is closed, the first boost signal is uncoupled from the output transistor, and when the transfer gate is opened, the first boost signal is coupled to the output transistor. The circuit also includes a protection transistor coupled to the second boost signal, a supply voltage and the output transistor, where the protection transistor couples the supply voltage to the output transistor when the transfer gate is closed.
A protection circuit for protecting an output transistor of a boost circuit that boosts the voltage level of a memory signal used to operate a memory device, the protection circuit comprising:
A protection circuit for protecting an output transistor of a boost circuit that boosts the voltage level of a memory signal used to operate a memory device, the output transistor having a channel capacitance between its gate and source terminals, the protection circuit comprising:
A method for protecting an output transistor of a boost circuit that boosts the voltage level of a memory signal used to operate a memory device, the method comprising steps of:
Dependencies are inferred from the claim text.