Back to results
US 6,486,929 B1Granted
Bonded layer semiconductor device
AssigneeKopin Corporation
InventorsDuy-Phach Vu, Brenda D. Dingle, Jason E. Dingle, Ngwe Cheong
Life of this patent
Estimating the term…
Abstract
The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.
Claims16
A semiconductor device comprising:
- a semiconductor layer having an insulator region and a plurality of transistors extending over the insulator region, each transistor including a silicon region defining a source and a drain, a gate, a first oxide layer separating the source and drain from the gate, a second oxide layer extending over the gate, and conductive interconnects, at least one of said interconnects extending from the transistor through the second oxide layer;
- a plurality of pixel electrodes extending over a surface of the semiconductor layer;
- each pixel electrode conductively connected to the interconnect extending through the second oxide layer of a corresponding transistor;
- a bonding layer extending over the semiconductor layer;
- a supporting substrate, the bonding layer bonding the semiconductor layer to the supporting substrate;
- and
- a protective layer extending between the bonding layer and a surface of the semiconductor layer that is adjacent to the transistors and opposite the insulator region.
4 more elements
A semiconductor device comprising:
- a semiconductor layer having a silicon region extending over an insulator region and having a plurality of transistors, each transistor including a source, a drain, a gate, and conductive interconnects;
- a bonding layer extending over the semiconductor layer;
- a supporting substrate, the bonding layer bonding the semiconductor layer to the supporting substrate;
- and
- a light shield extending between the bonding layer and a surface of the semiconductor layer that is adjacent to the silicon region and opposite the insulator region.
2 more elements
A semiconductor device comprising:
- a semiconductor layer having a silicon-on-insulator structure and having a plurality of transistors, each transistor including a source, a drain, a gate, and a conductive interconnects;
- a bonding layer extending over the semiconductor layer;
- a supporting substrate, The bonding layer bonding the semiconductor layer to the supporting substrate;
- and
- a light shield extending between the bonding layer and the semiconductor layer and covering each transistor.
2 more elements
Dependencies are inferred from the claim text.