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AssigneeAgere Systems Inc.
InventorsBradley Paul Barber, Edward Chan, John Edwin Graebner
Estimating the term…
Improved bandwidths and oscillation uniformity is obtained through a rod type BAW TFR structure formed over a semiconductor support. The resonator includes a first and a second electrode and a plurality of distinct elemental piezoelectric structures between the electrodes. Each of the piezoelectric structures has a length, a width and a height, the height being the distance between the electrodes. The height of the piezoelectric structures is at least equal to or more than one of the length or the width, or both. Such resonator is made by forming on a common bottom a plurality of distinct piezoelectric structures each having a length, a width and a height, wherein the height is formed at least equal to the width or the length of the piezoelectric structure, and forming a common top electrode thereover.
A thin film resonator comprising a plurality of distinct elemental resonators separated by spaces and connected in parallel, each of said resonators having a length, a width and a height, wherein said height is at least equal to one of said width and said length, wherein said spaces separating said elemental resonators are filled with a low dielectric constant filler material and electrical connection means for connecting said parallel connected elemental resonators to other circuitry.
A thin film acoustic resonator comprising a support, a first electrode over said support, a piezoelectric layer on said first electrode and a second electrode on said piezoelectric layer wherein said piezoelectric layer comprises a plurality of substantially identical distinct piezoelectric structures adjacent and separated from each other by spaces, said spaces filled with a low dielectric constant filler material, each of said structures having a length, a width and a height, said height being at least equal to one of said width and said length, said electrodes electrically connecting said piezoelectric structures in parallel, a first electrical connection means for connecting to said first electrode and a second electrical connection means for connecting to said second electrode.
An electronic circuit on a semiconductor substrate comprising at least one thin film acoustic resonator comprising a plurality of distinct elemental resonators separated by spaces and connected in parallel wherein said spaces separating said elemental resonators are filled with a low dielectric constant filler material, each of said elemental resonators having a length, a width and a height, wherein said height is at least equal to one of said width and said length.
A method of manufacturing a thin film resonator comprising:
A thin film acoustic resonator comprising a support, a first electrode over said support, a piezoelectric layer on said first electrode and a second electrode on said piezoelectric layer wherein said first electrode comprises a plurality of elongated strips extending along a first direction substantially parallel to said support, said second electrode also comprises a plurality of strips extending along a second direction also parallel to said support, said second direction crossing said first direction forming a plurality of crossover areas, and wherein said piezoelectric layer comprises a plurality of substantially identical distinct piezoelectric structures adjacent and separated from each other by spaces, each of said structures having a length, a width and a height, said height being at least equal to one of said width and said length, said piezoelectric structures located substantially between said first and said second electrodes in said crossover area.
Dependencies are inferred from the claim text.