Surface acoustic wave device
AssigneesFujitsu Media Devices Limited, Fujitsu Limited
InventorTokihiro Nishihara
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Abstract
A surface acoustic wave device comprising a substrate having a piezoelectric function on a surface thereof, and an electrode film having a four-layer structure comprising, from underneath, a first layer comprising Ti, a second layer comprising Al or an Al alloy, a third layer comprising an intermetallic compound, a silicide or a CuAl2, and a fourth layer comprising Al or an Al alloy on the substrate.
Claims13
A surface acoustic wave device comprising a substrate having a piezoelectric function on a surface thereof, and an electrode film having a four-layer structure on the substrate comprising, from underneath, a first layer comprising Ti, a second layer comprising Al or an Al alloy, a third layer comprising a silicide or CuAl2, and a fourth layer comprising Al or an Al alloy.
A surface acoustic wave device comprising a substrate having a piezoelectric function on a surface thereof, and an electrode film having a four-layer structure on the substrate comprising, from underneath, a first layer comprising Ti, a second layer comprising Al or an Al alloy, a third layer comprising TiAl, Ti3Al, Al12W or Al3Ta, and a fourth layer comprising Al or an Al alloy.
Dependencies are inferred from the claim text.