US 6,486,572 B1 · Semiconductor integrated circuit device with a stable operating internal circuit

Abstract

A semiconductor integrated circuit device has an output circuit composed of a P-channel transistor whose source is connected to a terminal for receiving a supplied voltage and an N-channel transistor whose source is connected to a terminal for receiving a ground voltage, with the node between the drains of the two transistors used as the output terminal of the output circuit. A capacitive circuit element is connected between the sources of the two transistors, and thus in parallel with the output circuit, so as to suppress variations that occur in the current supplied from the supplied power as a result of a current being fed through the output circuit to or from a load connected to the output terminal. This helps keep constant the voltage that is supplied to an internal circuit that is connected in parallel with the output circuit, and thereby stabilize the operation of the internal circuit.

Claims10

Dependent claims

A semiconductor integrated circuit device comprising:

a supplied power terminal for receiving electric power;
an internal circuit that operates on the electric power supplied thereto via said supplied power terminal;
an output circuit that operates on the electric power supplied thereto via said supplied power terminal;
a capacitive circuit element that is connected midway along a power supply path laid from said supplied power terminal to said output circuit and also connected to terminals arranged in close proximity to said output circuit and an output terminal thereof, said capacitive circuit element acting to allow an electric current that occurs as said output circuit is turned on and off to be supplied to and from said output terminal via said output circuit in such a way that at least part of a current supplied to said output circuit is supplied from said capacitive circuit element,
wherein an inductance that exists between said output circuit and said capacitive circuit element is made lower than an inductance that exists along said power supply path.

2 more elements

A semiconductor integrated circuit device comprising:

a first supplied power terminal for receiving a first supplied voltage;
a second supplied power terminal for receiving a second supplied voltage;
an internal circuit that is fed with electric power by being connected to said first and second supplied power terminals;
a first and second active devices connected between said first and second supplied power terminals;
an output terminal arranged in close proximity to said first and second active devices and connected to a node between said first and second active devices;
and
a capacitive circuit element connected to terminals arranged in close proximity to said first and second active devices and said output terminal, the capacitive circuit element also connected between a power supply path laid from said first supplied power terminal to said first active device and a power supply path laid from said second supplied power terminal to said second active device,
wherein said capacitive circuit element acting to allow an electric current that occurs as at least one of said first and second active devices is turned on and off to be supplied to and from said output terminal via said first active device and/or said second active device in such a way that at least part of a current supplied to said first active device and/or said second active device is supplied from said capacitive circuit element,
an inductance that exists between said first active device and said capacitive circuit element is made lower than an inductance that exists along said power supply path laid from said first supplied power terminal to said first active device, and
an inductance that exists between said second active device and said capacitive circuit element is made lower than an inductance that exists along said power supply path laid from said second supplied power terminal to said second active device.

7 more elements

A semiconductor integrated circuit device comprising:

a first supplied power terminal for receiving a first supplied voltage;
a second supplied power terminal for receiving a second supplied voltage;
an internal circuit that is fed with electric power by being connected to said first and second supplied power terminals;
a P-channel MOSFET having a source connected to said first supplied power terminal;
an N-channel MOSFET having a source connected to said second supplied power terminal and having a drain connected to a drain of said P-channel MOSFET;
an input terminal connected to a node between a gate of said P-channel MOSFET and a gate of said N-channel MOSFET;
an output terminal arranged in close proximity to said P-channel MOSFET and said N-channel MOSFET and connected to a node between the drain of said P-channel MOSFET and the drain of said N-channel MOSFET;
and
a capacitive circuit element connected to terminals arranged in close proximity to said P-channel MOSFET, said N-channel MOSFET, and said output terminal, the capacitive circuit element also connected a node between the source of said P-channel MOSFET and the source of said N-channel MOSFET,
wherein an inductance that exists between the source of said P-channel MOSFET and said capacitive circuit element is made lower than an inductance that exists along a power supply path laid from said first supplied power terminal to the source of said P-channel MOSFET, and
an inductance that exists between the source of said N-channel MOSFET and said capacitive circuit element is made lower than an inductance that exists along a power supply path laid from said second supplied power terminal to the source of said N-channel MOSFET.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor integrated circuit device with a stable operating internal circuit

Life of this patent

Semiconductor integrated circuit device with a stable operating internal circuit

Life of this patent

Abstract

Claims10