US 6,486,559 B1 · COPPER WIRING STRUCTURE COMPRISING A COPPER MATERIAL BURIED IN A HOLLOW OF AN INSULATING FILM AND A CARBON LAYER BETWEEN THE HOLLOW AND THE COPPER MATERIAL IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Abstract

The object of the present invention is to provide a copper wiring structure in which finely processed copper wiring in a wiring structure in grooves is steadily formed with a high reliability and a method for fabricating the same, wherein an electroconductive carbon layer is formed between the copper material—a copper wiring of a wiring structure in grooves in which the copper material is buried into a wiring groove or holes formed in the organic interlayer film mainly composed of carbon—and the organic interlayer film. This electroconductive carbon layer is formed after forming wiring grooves or holes in the desired region of the organic interlayer film, by a modification of the inner wall of the wiring grooves or holes by plasma irradiation. The copper wiring of the wiring structure in grooves as described above is formed by depositing copper on the electroconductive carbon layer.

Claims12

Dependent claims

A copper wiring structure for a semiconductor device, comprising:

an organic interlayer insulating film;
a copper material buried in a trench in the organic interlayer insulating film;
and
a conductive seed layer comprising carbon lining the trench between the copper material and the organic interlayer insulating film, the conductive seed layer being formed by modification of the organic interlayer insulating film such that the seed layer has an essentially uniform thickness and has a vertical profile that is the same as original side walls of the trench from which the seed layer was formed and does not extend into the trench beyond original side walls of the trench from which the seed layer was formed.

1 more element

A semiconductor device including a copper wiring structure, comprising:

a semiconductor substrate having a first insulation layer;
an organic interlayer insulating film formed on the first insulation layer;
a copper material buried in a trench in the organic interlayer insulating film;
and
a conductive seed layer comprising carbon lining the trench between the copper material and the organic interlayer insulating film, the conductive seed layer being formed by modification of the organic interlayer insulating film such that the seed layer has an essentially uniform thickness and has a vertical profile that is the same as original side walls of the trench from which the seed layer was formed and does not extend into the trench beyond original side walls of the trench from which the seed layer was formed.

2 more elements

Dependencies are inferred from the claim text.

Copper wiring structure comprising a copper material buried in a hollow of an insulating film and a carbon layer between the hollow and the copper material in semiconductor device and method of fabricating the same

Life of this patent

Copper wiring structure comprising a copper material buried in a hollow of an insulating film and a carbon layer between the hollow and the copper material in semiconductor device and method of fabricating the same

Life of this patent

Abstract

Claims12