Semiconductor device having a contact structure using aluminum

Abstract

A method of fabricating a semiconductor device comprises the following steps (a) to (f): (a) a step of forming a the contact hole in an interlayer dielectric formed on a semiconductor substrate including an electronic element; (b) a degassing step for removing gaseous components included within the interlayer dielectric, by thermal processing under a reduced pressure at a substrate temperature of 300° C. to 550° C.; (c) a step of forming a barrier layer on the interlayer dielectric and the contact hole; (d) a step of cooling the substrate to a temperature of no more than 100° C.; (e) a step of forming a first aluminum layer on the barrier layer, at a temperature of no more than 200° C., including aluminum or an alloy in which aluminum is the main component; and (f) a step is of forming a second aluminum layer on the first aluminum layer, at a temperature of at least 300° C., including aluminum or an alloy in which aluminum is the main component.

Dependencies are inferred from the claim text.