Semiconductor module with encapsulant base

A method of making a semiconductor module, comprising:

• providing a first semiconductor chip assembly that includes a first semiconductor chip and a first carrier, wherein the first chip includes a first conductive pad and the first carrier includes a first conductive trace;
• providing a second semiconductor chip assembly that includes a second semiconductor chip and a second carrier, wherein the second chip includes a second conductive pad and the second carrier includes a second conductive trace;
• forming an attachment joint that mechanically attaches the first and second carriers;
• forming an encapsulant base between and in contact with the first and second assemblies after forming the attachment joint;
• forming a through-hole that. extends through the carriers and the encapsulant base and is located outside the peripheries of the first and second chips;
• forming an electrical interconnect in the through-hole that contacts the first and second traces in the through hole;
• forming first and second connection joints, wherein the first connection joint contacts and electrically connects the first trace and the first pad, and the second connection joint contacts and electrically connects the second trace and the second pad;
• and
• removing the attachment joint.

A method of making a semiconductor module, comprising the following steps in the sequence set forth:

• providing first and second semiconductor chip assemblies, wherein the first assembly includes a first semiconductor chip and a first carrier, the first chip includes a first top surface and a first bottom surface, the first top surface includes a first conductive pad, the first carrier includes a first metal base and a first conductive trace, the first top surface faces towards the first metal base, the second assembly includes a second semiconductor chip and a second carrier, the second chip includes a second top surface and a second bottom surface, the second top surface includes a second conductive pad, the second carrier includes a second metal base and a second conductive trace, and the second top surface faces towards the second metal base;
• forming an attachment joint that mechanically attaches the first and second carriers, wherein the first and second traces are exposed and face towards one another, and the first and second bottom surfaces are exposed and face towards one another;
• forming an encapsulant base between and in contact with the first and second traces and the first and second bottom surfaces;
• forming a through-hole that extends through the first and second metal bases and the encapsulant base and exposes the first and second traces and is located outside the peripheries of the first and second chips;
• forming an electrical interconnect in the through-hole that contacts the first and second traces in the through-hole;
• forming first and second connection joints, wherein the first connection joint contacts and electrically connects the first trace and the first pad, and the second connection joint contacts and electrically connects the second trace and the second pad;
• and
• removing the attachment joint.

A method of making a semiconductor module, comprising;

• providing a first semiconductor chip that includes a first conductive pad;
• providing a first metal base;
• electroplating a first conductive trace on the first metal base;
• disposing a first insulative adhesive between the first chip and the first metal base, thereby mechanically attaching the first chip to the first metal base;
• providing a second semiconductor chip that includes a second conductive pad;
• providing a second metal base;
• electroplating a second conductive trace on the second metal base;
• disposing a second insulative adhesive between the second chip and the second metal base, thereby mechanically attaching the second chip to the second metal base;
• and then, in the sequence set forth,
• forming an attachment joint that mechanically attaches the first and second metal bases;
• forming an encapsulant base that contacts the first and second metal bases and the first and second traces;
• forming a through-hole that extends through the first and second metal bases and the encapsulant base and exposes the first and second traces and is located outside the peripheries of the first and second chips;
• and
• forming an electrical interconnect in the through-hole that contacts the first and second traces in the through-hole, wherein a first connection joint contacts and electrically connects the first trace and the first pad, and a second connection joint contacts and electrically connects the second trace and the second pad, such that the first and second pads are electrically connected to one another by an electrically conductive path that includes the first and second traces, the first and second connection joints and the electrical interconnect.

A method of making a semiconductor module, comprising:

• providing a first semiconductor chip assembly that includes a first semiconductor chip and a first carrier, wherein the first chip includes a first conductive pad, and the first carrier includes a first metal base and a first conductive trace;
• providing a second semiconductor chip assembly that includes a second semiconductor chip and a second carrier, wherein the second chip includes a second conductive pad, and the second carrier includes a second metal base and a second conductive trace;
• mechanically attaching the first and second assemblies, thereby defining a chamber between the first and second assemblies;
• filling an encapsulant base into the chamber;
• forming a through-hole that extends through the first and second metal bases and the encapsulant base and exposes the first and second traces and is located outside the peripheries of the first and second chips;
• forming an electrical interconnect in the through-hole that contacts the first and second traces;
• and
• forming first and second connection joints, wherein the first connection joint contacts and electrically connects the first trace and the first pad, and the second connection joint contacts and electrically connects the second trace and the second pad.

A semiconductor module, comprising:

• a first semiconductor chip assembly that includes a first semiconductor chip, a first conductive trace and a first connection joint, wherein the first chip includes a first conductive pad, the first trace extends within and outside a periphery of the first chip, and the first connection joint contacts and electrically connects the first trace and the first pad;
• a second semiconductor chip assembly that includes a second semiconductor chip, a second conductive trace and a second connection joint, wherein the second chip includes a second conductive pad, the second trace extends within and outside a periphery of the second chip, and the second connection joint contacts and electrically connects the second trace and the second pad;
• an encapsulant base disposed between and in contact with the first and second chips and the first and second traces;
• and
• an electrical interconnect disposed in a through-hole that extends through the encapsulant base and is located outside the peripheries of the first and second chips, wherein the electrical interconnect contacts the first and second traces in the through-hole, thereby electrically connecting the first and second traces.

A semiconductor module, comprising:

• a first semiconductor chip assembly that includes a first semiconductor chip, a first conductive trace and a first connection joint, wherein the first chip includes a first top surface, a first bottom surface and first outer edges between the first top and bottom surfaces, the first top surface includes a first conductive pad, the first trace extends within and outside a periphery of the first chip, and the first connection joint contacts and electrically connects the first trace and the first pad;
• a second semiconductor chip assembly that includes a second semiconductor chip, a second conductive trace and a second connection joint, wherein the second chip includes a second top surface, a second bottom surface and second outer edges between the second top and bottom surfaces, the second top surface includes a second conductive pad, the second trace extends within and outside a periphery of the second chip, and the second connection joint contacts and electrically connects the second trace and the second pad;
• a transfer molded encapsulant base disposed between and in contact with the first and second chips and the first and second traces, wherein the encapsulant base contacts the first and second bottom surfaces and the first and second outer edges;
• and
• an electrical interconnect disposed in a through-hole, wherein the through-hole extends through the first and second traces and the encapsulant base and is located outside the peripheries of the first and second chips, and the electrical interconnect covers vertical sidewalls of the through-hole and contacts the first and second traces at the sidewalls such that an electrically conductive path between the first and second pads consists of the first and second connection joints, the first and second traces and the plated metal interconnect.