Semiconductor device and a method of producing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorAtsushi Hachisuka
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorAtsushi Hachisuka
Estimating the term…
A semiconductor device and a method of producing the semiconductor device, fabricated by forming a memory device and a logic device on a single semiconductor substrate, are provided. A side wall (9) and a silicide protection film (10) of a gate electrode (7e) are used instead of forming a silicide protection film in a logic device region (101), whereby the number of steps in forming a logic process consolidating device can be reduced. Further, high concentration impurity regions are formed using the silicide protection film (10) as a mask, whereby a degree of freedom of a condition of implanting ions becomes high. In a memory device region (100), because the silicide protection film does not remain, an opening (17) can be formed in a self-replicating manner without deteriorating reliability of the semiconductor device, whereby it is possible to realize a preferable electrical connection between a source/drain area of the semiconductor device to a wiring layer in a self-alignment contact opening of the memory device region (100).
A semiconductor device having a memory device region and a logic device region on a principle surface of a semiconductor substrate comprising:
Dependencies are inferred from the claim text.