Reduction of reverse short channel effects by implantation of neutral dopants
AssigneeInternational Business Machines Corporation
InventorsJeffrey Scott Brown, Stephen Scott Furkay, Robert J. Gauthier, Jr., Dale Warner Martin, James Albert Slinkman
Life of this patent
Estimating the term…
Abstract
A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
Claims13
A semiconductor device comprising:
- a semiconductor substrate;
- a first diffusion region disposed in said substrate;
- a second diffusion region disposed in said substrate;
- a channel region disposed between said first diffusion region and said second diffusion region;
- a gate oxide disposed on said semiconductor substrate over said channel region and overlapping said first diffusion region and said second diffusion region;
- a gate electrode disposed on said gate oxide;
- and,
- a neutral dopant diffusion implant disposed throughout said substrate, said neutral dopant diffusion implant having a peak concentration below said first diffusion region and said second diffusion region.
Dependencies are inferred from the claim text.