Non-volatile memory cell
AssigneeImec Vzw
InventorJan Van Houdt
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Abstract
The present invention is related to a non-volatile memory cell, comprising a semiconductor substrate including a source region and a drain region with a channel region there between; a floating gate of a conductive material at least partially extending over a first portion of said channel region; a control gate of a conductive material and at least partially extending over a second portion of the channel region; an additional program gate of a conductive material and at least partially overlapping said floating gate and being capacitively coupled through a dielectric layer to said floating gate.
Claims2
A contacted array configuration of non-volatile memory cells, each cell comprising:
- a semiconductor substrate including a source region and a drain region with a channel region therebetween;
- a floating gate of a conductive material at least partially extending over a first portion of said channel region;
- a control gate of a conductive material at least partially extending over a second portion of the channel region;
- and
- an additional program gate of a conductive material at least partially overlapping said floating gate and being capacitively coupled through a dielectric layer to said floating gate,
- wherein at least a portion of the control gate is positioned between at least a portion of the floating gate and at least a portion of the channel.
Dependencies are inferred from the claim text.