CMOS image sensor with extended dynamic range

An X-Y addressable MOS imaging system comprising:

• a semiconductor having an active pixel sensor formed, thereon;
• an array of pixels formed within the active pixel sensor, with a plurality of the pixels formed such that each pixel within the plurality of pixels has a photodetector coupled to a sense node, a reset mechanism operatively connected to the sense node to adjust the sense node potential to a predetermined level, and an output amplifier operatively connected to receive reset potential levels from the sense node;
• a predetermined set of transfer functions used to determine the signal level of the photodetectors;
• means for applying multiple resets to the sensor and comparing the reset levels to determine if a difference in the reset levels exist;
• means responsive to the means for comparing to identify which transfer function is applicable to the measured signal output if the difference exist;
• and
• means for determining the light intensity from the applied transfer function.

An X-Y addressable MOS imaging system comprising:

• a semiconductor having an active pixel sensor formed, thereon;
• an array of pixels formed within the active pixel sensor, with a plurality of the pixels formed such that each pixel within the plurality of pixels has a photodetector and a transistor operatively connected to selectively connect the photodetector to an output bus;
• a predetermined set of transfer functions used to determine the signal level of the photodetectors;
• means for applying multiple resets to the sensor and comparing the reset levels to determine if a difference in the reset levels exist;
• means responsive to the means for comparing to identify which transfer function is applicable to the measured signal output if the difference exist;
• and
• means for determining the light intensity from the applied transfer function.

An X-Y addressable MOS imaging system comprising:

• a semiconductor having an active pixel sensor formed, thereon;
• an array of pixels formed within the active pixel sensor, with a plurality of the pixels formed such that each pixel within the plurality of pixels has a photodetector coupled to a sense node, a reset mechanism operatively connected to the sense node to adjust the sense node potential to a predetermined level, and an output amplifier operatively connected to receive reset potential levels from the sense node;
• a predetermined set of transfer functions used to determine the signal level of the photodetectors;
• means for applying multiple resets to the sensor and comparing the reset levels to determine if a difference in the reset levels exist;
• means responsive to the means for comparing for applying the transfer function to the measured difference between reset levels;
• and
• means for determining the light intensity from the applied transfer function.