US 6,486,499 B1 · III-nitride light-emitting device with increased light generating capability

Abstract

The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

Claims18

Dependent claims

A light-emitting device comprising:

a heterostructure of III-nitride material comprising a first light emitting unit;
the first light emitting unit comprising an active region, an n type layer and a p type layer;
an opaque p electrode, attached to the p type layer;
an n electrode, attached to the n type layer, interposing portions of the p electrode;
and
a p conductive interface and an n conductive interface, the p conductive interface affixed to the p-electrode and the n conductive interface affixed to the n-electrode;
wherein the lateral cross-sectional area of the p conductive interface and n conductive interface is at least 15% of an area of the p electrode.

4 more elements

Dependencies are inferred from the claim text.

III-nitride light-emitting device with increased light generating capability

Life of this patent

III-nitride light-emitting device with increased light generating capability

Life of this patent

Abstract

Claims18