Method for manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
Life of this patent
Estimating the term…
Abstract
A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.
Claims35
A semiconductor device having at least one thin film transistor, comprising:
- a blocking layer over a substrate;
- at least one active layer comprising a crystalline semiconductor film over said blocking layer;
- and
- an insulating layer so as to cover both said active layer and said blocking layer,
- wherein said blocking layer and said insulating layer comprise the same material and are in contact with each other at portions over said substrate except where said active layer is formed thereon, and
- wherein said crystalline semiconductor film shows a sharp peak at a wave number of 520 cm−1 in Raman spectroscopic analysis.
A semiconductor device having at least one thin film transistor, comprising:
- a blocking layer comprising silicon oxide over a substrate;
- at least one active layer of a thin film transistor, said active layer comprising a crystalline semiconductor film over said blocking layer;
- and
- an insulating layer comprising silicon oxide so as to cover both said active layer and said blocking layer,
- wherein said blocking layer and said insulating layer are in contact with each other at portions except where said active layer is formed over said substrate, and
- wherein said crystalline semiconductor film shows a sharp peak at a wave number of 520 cm−1 in Raman spectroscopic analysis.
A semiconductor device having at least one thin film transistor, comprising:
- a blocking layer over a substrate;
- at least one active layer comprising a crystalline semiconductor film over said blocking layer;
- and
- an insulating layer so as to cover both said active layer and said blocking layer,
- wherein said blocking layer and said insulating layer are in contact with each other at portions over said substrate except where said active layer is formed thereon, and
- wherein said crystalline semiconductor film shows a sharp peak at a wave number of 520 cm−1 in Raman spectroscopic analysis.
A semiconductor device having at least one thin film transistor, comprising:
- a blocking layer over a substrate;
- at least one active layer comprising a crystalline semiconductor film over said blocking layer;
- and
- an insulating layer so as to cover both said active layer and said blocking layer,
- wherein said active layer is wrapped in said insulating layer and said blocking layer over said substrate,
- wherein said blocking layer and said insulating layer comprise the same material, and
- wherein said crystalline semiconductor film shows a sharp peak at a wave number of 520 cm−1 in Raman spectroscopic analysis.
A semiconductor device having at least one thin film transistor, manufactured by the steps of:
- heating a substrate;
- forming a blocking layer over said substrate;
- forming a semiconductor film over said blocking layer;
- crystallizing said semiconductor film;
- forming at least one active layer by patterning the crystallized semiconductor film;
- and
- forming an insulating layer so as to cover both said active layer and said blocking layer,
- wherein said blocking layer and said insulating layer are in contact with each other at portions over said substrate except where said active layer is formed thereon, and
- wherein said crystalline semiconductor film shows a sharp peak at a wave number of 520 cm−1 in Raman spectroscopic analysis.
A semiconductor device having at least one thin film transistor, manufactured by the steps of:
- heating a substrate;
- forming a blocking layer over said substrate;
- forming a semiconductor film on said blocking layer;
- crystallizing said semiconductor film;
- forming at least one active layer utilizing the crystallized semiconductor film;
- and
- forming an insulating layer so as to cover both said active layer and said blocking layer,
- wherein said active layer is wrapped in said insulating layer and said blocking layer over said substrate, and
- wherein said crystalline semiconductor film shows a sharp peak at a wave number of 520 cm−1 in Raman spectroscopic analysis.
Dependencies are inferred from the claim text.