Light-emitting device with a quantum-wave interference layer

A light-emitting device comprising:

• a first and a second quantum-wave interference layers each having plural periods of a pair of a first layer and a second layer having a wider band gap than said first layer, each of said first and said second quantum-wave interference layers being formed on respective sides of an emission layer with p-type conduction;
• wherein each thickness of said first and said second layers of said first quantum-wave interference layer is equal to an odd number multiplied by one fourth of wavelength of quantum-wave of electrons in each of said first and second layers, and each thickness of said first and said second layers of said second quantum-wave interference layer is equal to an odd number multiplied by one fourth of wavelength of quantum-wave of holes in each of said first and said second layers,
• wherein with respect to said first and second quantum-wave interference layer, said wavelength λW in said first layer is determined by a formula λW=h/[2mW(E+V)]½, said wavelength λB in said second layer is determined by a formula λB=h/(2mBE)½, said thickness of said first layer DW is determined by a formula DW=nWλW/4, and said thickness of said second layer DB is determined by a formula DB=nBλB/4, where h, mW, mB, E, V, and nW and nB represent Plank's constant, an effective mass of said carrier in said first layer, an effective mass of said carrier in said second layer, a kinetic energy of carriers injected into said second layer, a potential energy of said second layer to said first layer, and odd number, respectively, and wherein E≦V/9.