Semiconductor radiation detector and manufacture thereof

A manufacturing method of a semiconductor radiation detector provided with a process for polishing both of front and back surfaces of a semiconductor wafer, an etching process for removing damage due to polishing said surfaces, a process for doping impurities into a semiconductor wafer and forming a high-density layer, a process for dicing a crystal for forming said detector from said semiconductor wafer, a process for polishing the diced crystal, a process for removing the damaged layer due to the polishing of the diced surfaces of said crystal by etching, a process for forming an insulating passivation film by coating a resin solution on said diced and etched surfaces and on a periphery of an electrode formed region at said front and back surfaces of said crystal and a process for forming a pair of electrodes composed a light receiving front electrode and a signal output back electrode in said electrode formed region at the front and back surfaces of said crystal, wherein:

• the process for dicing the crystal from said semiconductor wafer is a process for shaping a polygonal crystal,
• the process for polishing the diced crystal is a process for polishing at least said diced surfaces of the polygonal crystal to be a mirror finished surface,
• the process for forming the insulating passivation film by coating the resin solution on the surface of said polygonal crystal is processed as a preprocess of the process for forming a pair of electrodes in said electrode formed region,
• and the process forming said light receiving front electrode in said electrode formed region at the front surface of said polygonal crystal includes a process for covering the periphery of the insulating passivation film formed in the vicinity of said electrode formed region, mutually overlapping the periphery of said insulating passivation film and the periphery of said light receiving front electrode and forming laminated structure.

A manufacturing method of a pin-type semiconductor radiation detector provided with a process for polishing to be mirror finished surface both front and back surfaces of a high-purity n-type silicon semiconductor wafer, an etching process for removing damage due to polishing said surfaces, a process for doping impurities into both surfaces of said semiconductor wafer and forming a high-density layer, a process for dicing a crystal from said semiconductor wafer, a process for polishing the diced surfaces of said crystal, polishing said high-density layer of the front surface and removing it, a process for removing the damaged layer due to the polishing of the diced surfaces and the front surface by etching, a process for forming an insulating passivation film by coating a resin solution from said diced and etched surfaces to on a periphery of an electrode formed region said front and back surfaces of the crystal and a process for forming a pair of electrodes composed a light receiving front electrode and a signal output back electrode in said each electrode formed region so that Schottky barrier is formed between said light receiving front electrode and said front surface of the crystal and an ohmic contact is formed between said signal output back electrode and said back surface of the crystal, wherein:

• the process for dicing the crystal from said semiconductor wafer is a process for dicing a polygonal shaped crystal for forming said detector in the shape of a polygon,
• the process for polishing the diced surfaces of the polygonal shaped crystal is a process for polishing at least said diced surfaces of the polygonal crystal to be a mirror finished surface,
• the process for forming the insulating passivation film by coating the resin solution on the surface of said polygonal crystal is processed as a preprocess of the process for forming a pair of electrodes in said electrode formed region, and
• the process for forming said light receiving front electrode in said electrode formed region at the front surface of the polygonal crystal includes a process for covering the periphery of the insulating passivation film formed in the vicinity of said electrode formed region, mutually overlapping the periphery of said insulating passivation film and the periphery of said light receiving front electrode and forming laminated structure.

An apparatus of radiation detection provided with a holder for holding a semiconductor radiation detector and a cryostat for cooling said fixer, wherein:

• said semiconductor radiation detector comprises a polygonal crystal diced from a semiconductor wafer having either of the p-i-n or P-n or Schottky barrier diode structure;
• the side surfaces of said diced polygonal crystal adopted by mirror-polishing;
• a pair of electrodes composed of a light receiving electrode and a signal output electrode on the front and back surfaces of said polygonal crystal;
• an insulating passivation film continuously formed by coating a resin solution from said side surfaces of the diced polygonal crystal to the periphery of said front and back surfaces of said diced crystal;
• the periphery of said light receiving front electrode covers the periphery of said insulating passivation film on the front surface of the polygonal crystal so that the peripheries of said light receiving electrode and said insulating passivation film on the front surface of the polygonal crystal are mutually overlapped and laminated.