Diode structure, especially for thin-film solar cells
AssigneeSiemens and Shell Solar GmbH
InventorFranz Karg
Life of this patent
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Abstract
The invention relates to a diode structure, especially for thin film solar cells. The aim of the invention is to provide a diode structure for thin film solar cells. Said structure allows for an assembly of a thin film solar cell, whereby said assembly is as flexible as possible, efficiency is high, and utilizing materials that are as environmentally friendly as possible. A diode structure comprising a p-conducting layer, which consists of a chalcopyrite compound, and a n-conducting layer, which is adjacent to the p-conducting layer and consists of a compound that contains titanium and oxygen, is provided.
Claims16
A diode structure for thin-film solar cells, comprising:
- a p-conducting layer comprising a chalcopyrite compound;
- a n-conducting layer having a first band gap and comprising a compound, the compound containing titanium and oxygen, the n-conducting layer adjoining the p-conducting layer;
- a n-conducting amplifying layer having a second band gap;
- and
- wherein a side of the n-conducting layer facing away from the p-conducting layer adjoins the n-conducting amplifying layer;
- and
- wherein the second band gap is larger than the first band gap.
A thin-film solar cell comprising:
- a diode structure, the diode structure comprising:
- a p-conducting layer comprising a chalcopyrite compound;
- a n-conducting layer having a first band gap and comprising a compound, the compound containing titanium and oxygen, the n-conducting layer adjoining the p-conducting layer;
- a n-conducting amplifying layer having a second band gap;
- and
- wherein a side of the n-conducting layer facing away from the p-conducting layer adjoins the n-conducting amplifying layer;
- and
- wherein the second band gap is larger than the first band gap.
Dependencies are inferred from the claim text.