Aluminum nitride sintered bodies and semiconductor-producing members including same
AssigneeNGK Insulators, Ltd.
InventorsYuji Katsuda, Masaaki Masuda
Life of this patent
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Abstract
An aluminum nitride sintered body is provided. The aluminum nitride has a polycrystalline structure of aluminum nitride crystals having an average particle diameter in a range of 5 μm to 20 μm and cerium in a range of 0.01 wt % 1.0 wt %, when calculated as an oxide thereof. The aluminum nitride sintered body has a room temperature volume resistivity in a range of 1×108 Ω·cm to 1×1012 Ω·cm under the application of 500 V/mm, and a value of a in the I-V relational equation, I=kVα, is in a range of 1.0 to 1.5, V being a voltage in a range of 100 V/mm to 1000 V/mm, I being a leak current when V is applied to said aluminum nitride body, k being a constant, and α being a non-linear coefficient.
Claims12
An aluminum nitride sintered body, comprising:
- aluminum nitride having a polycrystalline structure of aluminum nitride crystals, said aluminum nitride crystals having an average particle diameter in a range of 5 μm to 20 μm;
- and
- cerium in a range of 0.01 wt % to 1.0 wt %, when calculated as an oxide thereof;
- wherein said aluminum nitride sintered body has a room temperature volume resistivity in a range of 1×108 Ω·cm to 1×1012 Ω·cm under the application of 500 V/mm, and a value of a in an I-V relational equation, I=kVα, is in a range of 1.0 to 1.5, V being a voltage in a range of 100 V/mm to 1000 V/mm, I being a leak current when V is applied to said aluminum nitride body, k being a constant, and a being a non-linear coefficient.
Dependencies are inferred from the claim text.