Semiconductor device manufacturing method and semiconductor manufacturing apparatus

A semiconductor device manufacturing method, comprising:

• a step of forming, by thermal chemical vapor deposition, silicon oxynitride films on a plurality of substrates vertically stacked in a vertical reaction tube having an inner wall, with bis tertiary butyl amino silane, NH3 and N2O flowing into said vertical reaction tube and flowing from one end of said plurality of substrates to an opposing end of said plurality of substrates and not flowing into said vertical reaction tube through said inner wall at a height between said one end and said opposing end of said plurality of substrates, wherein
• said silicon oxynitride films are formed on said plurality of substrates in a state in which a distance “a” between adjacent substrates of said plurality of substrates and a distance “b” between edges of said plurality of substrates and said inner wall of said vertical reaction tube are maintained substantially equal to each other.

The semiconductor device manufacturing method according to 1, wherein said silicon nitride films are formed on said plurality of substrates, with bis tertiary butyl amino silane and NH3 flowing into said vertical reaction tube from underneath said plurality of substrates and then upward within said vertical reaction tube above said plurality of substrates.

The semiconductor device manufacturing method according to 3, wherein said silicon oxynitride films are formed on said plurality of substrates, with bis tertiary butyl amino silane, NH3, and N2O flowing into said vertical reaction tube from underneath said plurality of substrates and then upward within said vertical reaction tube above said plurality of substrates.

A semiconductor device manufacturing method comprising:

• a step of forming, by thermal chemical vapor deposition, silicon nitride films on a plurality of substrates stacked on a boat having a boat column with bis tertiary butyl amino silane and NH3 flowing into a reaction tube accommodating said plurality of substrates, wherein
• said reaction tube is provided, at a position corresponding to said boat column, with a boat column groove for accepting said boat column;
• and wherein said silicon nitride films are formed on said plurality of substrates in a state in which a distance “a” between adjacent substrates of said plurality of substrates and a distance “b” between edges of said plurality of substrates and an inner wall of said reaction tube are maintained substantially equal to each other.

The semiconductor device manufacturing method according to 8, wherein said silicon nitride films are formed on said plurality of substrates, with bis tertiary butyl amino silane and NH3 flowing into said vertical reaction tube from underneath said plurality of substrates and then upward within said vertical reaction tube above said plurality of substrates.

A semiconductor device manufacturing method comprising:

• a step of forming, by thermal chemical vapor deposition, silicon oxynitride films on a plurality of substrates stacked on a boat having a boat column with bis tertiary butyl amino silane, NH3, and N2O flowing into a reaction tube accommodating said plurality of substrates, wherein
• said reaction tube is provided, at a position corresponding to said boat column, with a boat column groove for accepting said boat column;
• and wherein said silicon oxynitride films are formed on said plurality of substrates in a state in which a distance “a” between adjacent substrates of said plurality of substrates and a distance “b” between edges of said plurality of substrates and an inner wall of said reaction tube are maintained substantially equal to each other.

The semiconductor device manufacturing method according to 14, wherein said silicon oxynitride films are formed on said plurality of substrates, with bis tertiary butyl amino silane, NH3, and N2O flowing into said vertical reaction tube from underneath said plurality of substrates and then upward within said vertical reaction tube above said plurality of substrates.