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AssigneeApplied Materials, Inc.
InventorsSeon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate, wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant that is at least 5% less than a dielectric constant obtained by omitting the aliphatic organosilicon compound.
A method for depositing a low dielectric constant film on a semiconductor substrate, comprising reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate, wherein both the cyclic organosilicon compound and the aliphatic organosilicon compound comprise a silicon-hydrogen bond, and wherein the low dielectric constant film comprises silicon-carbon bonds and a dielectric constant that is at least 5% less than a dielectric constant obtained by omitting the aliphatic organosilicon compound.
A method for depositing a low dielectric constant film, comprising;
Dependencies are inferred from the claim text.