Method to form zirconium oxide and hafnium oxide for high dielectric constant materials

A method to form a metal oxide dielectric layer in the manufacture of an integrated circuit device comprising:

• providing a substrate;
• depositing a metal oxide layer overlying said substrate by reacting a precursor with an oxidant gas in a chemical vapor deposition chamber wherein said metal oxide comprises one of the group of:
• hafnium oxide and zirconium oxide, and wherein said metal oxide is not doped by another metal, and wherein said precursor comprises one of the group of:
• hafnium alkoxide, hafnium alkoxide containing halogen, hafnium β-diketonate, hafnium fluorinated β-diketonate, hafnium oxoacid, hafnium acetate, hafnium alkene, zirconium alkoxide, zirconium alkoxide containing halogen, zirconium β-diketonate, zirconium fluorinated β-diketonate, zirconium oxoacid, zirconium acetate, and zirconium alkene;
• and
• annealing said metal oxide layer to cause densification and to complete the formation of said metal oxide dielectric layer in the manufacture of said integrated circuit device.

A method to form a metal oxide-silicon oxide dielectric layer in the manufacture of an integrated circuit device comprising:

• providing a substrate;
• depositing a metal oxide-silicon oxide layer overlying said substrate by reacting a precursor with an oxidant gas in a chemical vapor deposition chamber wherein said precursor comprises metal tetrasiloxane;
• and
• annealing said metal oxide-silicon oxide layer to cause densification and to complete the formation of said metal oxide-silicon oxide dielectric layer in the manufacture of said integrated circuit device.