US 6,486,068 B2Granted

Method for manufacturing group III nitride compound semiconductor laser diodes

AssigneesToyoda Gosei Co., Ltd., Isamu Akasaki, Hiroshi Amano, Japan Science and Technology Corporation, Isao Yamada, Jiro Matsuo

InventorsShiro Yamasaki, Seiji Nagai, Masayoshi Koike, Isamu Akasaki, Hiroshi Amano, Isao Yamada, Jiro Matsuo

Life of this patent

Estimating the term…

patentgrep

Loading patent…

Abstract

A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.

Claims15

Dependent claims

A method for manufacturing a laser diode using a Group III nitride semiconductor, the method comprising:

forming a plurality of layers each of which comprises a Group III nitride compound semiconductor having different components or composition ratios;
dry-etching said layers to form a pair of opposite and parallel facets of a cavity, thereby forming substantial surface roughness on said facets;
and
further etching said facets by gas cluster ion beam etching to substantially decrease said surface roughness formed on said facets by said dry-etching, said gas cluster ion beam etching being executed under a condition that a wafer is cut into strips parallel to said facets and said strips are disposed with said facets oriented in a direction that is substantially perpendicular to a direction of said gas cluster ion beam.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 09/004,608Filed 8 Jan 1998
Published: US 2002/0006726 A117 Jan 2002
Granted: 26 Nov 2002
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H01S 5/0201
Structural details or components not essential to laser action: separation of the wafer into individual elements, e.g. by dicing, cleaving,…
H01S 5/0203
Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth: etching
H01S 5/32341
Emitting light at a wavelength less than 900 nm: blue laser based on GaN or GaP
H01S
Devices using the process of light amplification by stimulated emission of radiation