Method for fabricating a semiconductor device using conductive oxide and metal layer to silicide source + drain

Abstract

A method for fabricating semiconductor device capable of forming silicide suitable for highly integrated semiconductor device comprising the steps of: forming a conductive oxide layer and metal layer on a substrate having a gate and source/drain regions; performing a first thermal treatment on the resulting structure; selectively removing the metal layer to retain the metal layer over only the part corresponding to the source/drain regions; forming an intermediate phase by etching the conductive oxide layer with the remaining metal layer employed as a mask; and forming a silicide layer by performing a second thermal treatment on the substrate including the intermediate phase.

Dependencies are inferred from the claim text.