US 6,486,047 B2 · Apparatus for forming strontium-tantalum-oxide thin film

Abstract

An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.

Claims6

Dependent claims

A method for forming Strontium-Tantalum-Oxide thin film on a patterned substrate, comprising the steps of:

a) arranging said substrate in a reaction chamber;
b) introducing a source material into the reaction chamber using a carrier gas, said source material being vaporized in said carrier gas and containing Strontium Tantalum Ethoxide;
c) blowing said source material out of said reaction chamber using purge gas;
d) introducing oxygen gas into the reaction chamber and generating oxygen plasma;
and
e) blowing the oxygen plasma out of the reaction chamber using purge gas.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/872,279Filed 31 May 2001

Priority

KR 00-7203330 Nov 2000

Published

US 2002/0064927 A130 May 2002

Granted

26 Nov 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10P 14/6339
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: deposition by cyclic CVD, e.g. ALD, ALE or…
C23C 16/409
Oxides: of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a…
C23C 16/45542
Use of plasma, radiation or electromagnetic fields: plasma being used non-continuously during the ALD reactions
C23C 16/45544
Atomic layer deposition [ALD]: characterized by the apparatus

Apparatus for forming strontium-tantalum-oxide thin film

Life of this patent

Apparatus for forming strontium-tantalum-oxide thin film

Life of this patent

Abstract

Claims6