Method of forming polycrystalline semiconductor film
AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Fujimura, Shinichi Kawamura
Life of this patent
Estimating the term…
Abstract
It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with a specific amount of oxygen, to change the amorphous semiconductor film into a polycrystalline semiconductor film, and a second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as major component with oxygen of an amount less than the specific amount.
Claims14
A method of forming a polycrystalline semiconductor film comprising:
- depositing an amorphous semiconductor film on a substrate;
- first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with a specific amount of oxygen, to change the amorphous semiconductor film into a polycrystalline semiconductor film;
- and
- second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with oxygen of an amount less than the specific amount.
A method of forming a polycrystalline semiconductor film comprising:
- forming a polycrystalline semiconductor film on a substrate;
- irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with oxygen, an amount of the oxygen being 1 ppm or more but 50 ppm or less.
A method of forming a polycrystalline semiconductor film comprising:
- depositing an amorphous semiconductor film on a substrate;
- first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with oxygen, an amount of the oxygen being 5 ppm or more but less than 10%, to change the amorphous semiconductor film into a polycrystalline semiconductor film;
- and
- second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere containing an inert gas as a major component with oxygen, an amount of the oxygen being 1 ppm or more but 50 ppm or less.
Dependencies are inferred from the claim text.