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AssigneeCanon Kabushiki Kaisha
InventorsTakashi Otsuka, Tatsuyuki Aoike, Toshiyasu Shirasuna, Kazuyoshi Akiyama, Hitoshi Murayama, Daisuke Tazawa, Kazuto Hosoi
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In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without variation in film quality, in an apparatus and a method for forming a deposited film, a part of a reaction vessel is formed of a dielectric member, at least one high-frequency electrode is arranged so as to face at least one substrate with interposition of the dielectric member, an earth shield is arranged so as to cover the reaction vessel and the high-frequency electrode, plasma is generated between the high-frequency electrode and the substrate, and a deposited film is formed under the conditions in which the following equation: 0.8×(ε2/d3)<1/(d1/ε1+d2/ε2) is satisfied where d1 is the thickness of the dielectric member, d2 is the distance from the surface of the high-frequency electrode to the dielectric member, d3 is the distance from the surface of the high-frequency electrode to the inside surface of the earth shield, ε1 is a dielectric constant of the dielectric member, and ε2 is a dielectric constant of a space between the reaction vessel and the earth shield.
An apparatus for forming a deposited film comprising:
A method for forming a deposited film on a substrate, comprising the steps of:
Dependencies are inferred from the claim text.