Method of forming dislocation filter in merged SOI and non-SOI chips
AssigneeInternational Business Machines Corporation
InventorsRobert Hannon, Herbert L. Ho, Subramanian Iyer, S. Sundar Kumar Iyer
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Abstract
A method for forming a semiconductor devices structure includes providing a semiconductor substrate, forming a deep trench continuously in the substrate to separate a first region from a second region, and then forming a silicon-on-insulator region in the first region while maintaining a non-silicon-on-insulator region in the second region. The deep trench has a depth which is at least as deep as the depth of the buried oxide in the substrate. The invention also includes a device structure resulting from the method.
Claims9
A method for forming a semiconductor device structure, comprising;
- providing a semiconductor substrate;
- forming a deep trench continuously within the substrate to separate a semiconductor first region from a semiconductor second region;
- disposing oxygen into the semiconductor first region to form a SIMOX region while maintaining a non-SIMOX region in the semiconductor second region;
- annealing the SIMOX region and the non-SIMOX region to form an SOI region in the SIMOX region, said method further comprising
- removing a portion of the semiconductor first region prior to said step of disposing oxygen into the semiconductor first region, the portion being sufficient to accommodate for an expansion of the semiconductor first region during said step of annealing.
Dependencies are inferred from the claim text.