Method and device for controlled cleaving process
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan W. Cheung
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Abstract
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Claims20
A process for manufacturing substrates, said process comprising:
- forming a stressed region at a selected depth uderneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above said selected depth, the stressed region comprising a deposited layer and an implanted region;
- and
- using a static pressure to a selected region of said substate to initiate a controlled cleaving action at a cleaving plane within a vicinity of the stressed region in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
A process for forming substrates, said process comprising:
- forming a stressed region at a selected depth underneath a surface of a substrate, said stressed region at said selected depth to define a substrate material to be removed above a vicinity of said selected depth, said stressed region comprising at least a deposited layer and an implanted region;
- bonding said surface of the substrate to a handle substrate;
- and
- using a static fluid source to a selected region of said substrate to initiate a controlled cleaving action at a cleaving plane at said selected depth in said substrate, whereupon said cleaving action is made using a propagating cleave front to free a portion of said material to be removed from said substrate.
Dependencies are inferred from the claim text.