Control of buried oxide quality in low dose SIMOX
AssigneeInternational Business Machines Corporation
InventorsMaurice H. Norcott, Devendra K. Sadana
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Abstract
A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stable defect region, wherein the low energy implantation steps uses at least one ion other than oxygen; oxidation and, optionally, annealing, is provided. Silicon-on-insulator (SOI) materials comprising a semiconductor substrate having a DIBOX region in patterned or unpatterned forms is also provided herein.
Claims39
A method of fabricating a defect induced buried oxide region having a controllable thickness and a fixed charge, said method comprising:
- (a) implanting oxygen ions into a surface of a semiconductor substrate at a base ion dose of about 5×1016 cm−2 or above so as to form a stable buried damaged region in said semiconductor substrate;
- (b) implanting second ions into said surface of said semiconductor substrate at a second ion dose of about 1×1015 cm−2 or above so as to form an amorphous layer adjacent to said stable buried damaged region, wherein said second ions comprise at least one dissimilar ion than said oxygen ions employed in step (a);
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- (c) oxidizing the implanted structure produced by step (b) so as to form a buried oxide region within said substrate.
Dependencies are inferred from the claim text.