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US 6,486,021 B2Granted
Method for manufacturing a semiconductor device having incorporated therein a high K capacitor dielectric
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsMin-Soo Kim, Chan Lim
Life of this patent
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Abstract
A semiconductor device for use in a memory cell includes an active matrix an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of lower electrodes formed on top of the conductive plugs, Ta2O5 films formed on the lower electrodes, composite films formed on the Ta2O5 films and upper electrodes formed on the composite films.
Claims16
A method for manufacturing a semiconductor device for use in a memory cell, the method comprising the steps of:
- a) preparing an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs;
- b) forming a first conductive layer on top of the active matrix;
- c) patterning the first conductive layer a predetermined configuration, thereby obtaining a number of lower electrodes;
- d) forming a Ta2O5 layer on the lower electrodes;
- e) forming a Ta2xAl2(1−x)Oy composite layer on the Ta2O5 layer, x and y representing mole %;
- f) forming a second conductive layer on the Ta2xAl2(1−x)Oy composite layer;
- and
- g) patterning the second conductive layer, the Ta2O5 layer and the Ta2xAl2(1−x)Oy composite layer into a preset configuration, thereby obtaining the semiconductor device.
5 more elements
Dependencies are inferred from the claim text.