High pressure reoxidation/anneal of high dielectric constant materials

A method, comprising:

• forming a bottom plate electrode;
• forming a high dielectric constant film on the bottom plate electrode;
• thermally conditioning the high dielectric constant film in a nitrogen-containing atmosphere and then in an oxygen-containing atmosphere;
• and
• forming a top plate electrode on the high dielectric constant film.

A method, comprising:

• forming a bottom plate electrode;
• forming a high dielectric constant film on the bottom plate electrode;
• annealing the high dielectric constant film in a nitrogen containing atmosphere;
• oxidizing the high dielectric constant film;
• and
• forming a top plate electrode on the high dielectric constant film.

A method, comprising:

• forming a bottom plate electrode;
• forming a dielectric film on the bottom plate electrode, the dielectric film having a dielectric constant of seven or greater;
• densifying or conditioning the dielectric film by performing a nitridation step followed by an oxidation step;
• and
• forming a top plate electrode on the dielectric film.

A method of fabricating a semiconductor structure, comprising:

• forming a transistor supported by a substrate;
• forming a memory cell supported by the substrate, wherein forming the memory cell includes:
• forming a bottom plate electrode in electrical communication with a source/drain region of the transistor;
• forming a dielectric film on the bottom plate electrode;
• densifying or conditioning the dielectric film by performing nitridation followed by an oxidation step on the dielectric film;
• and
• forming a top plate electrode on the dielectric film.

A method of fabricating a memory device, comprising:

• forming a transistor supported by a substrate, wherein forming the transistor includes forming a source/drain region adjacent a gate structure;
• forming a memory cell supported by the substrate, wherein forming the memory cell includes:
• forming a bottom plate electrode at least partially on the source/drain region of the transistor;
• forming a dielectric film on the bottom plate electrode;
• densifying or conditioning the dielectric film by performing nitridation followed by an oxidation step on the dielectric film;
• and
• forming a top plate electrode on the dielectric film.