Methods of electrically contacting to conductive plugs, methods of forming contact openings, and methods of forming dynamic random access memory circuitry

A method of forming a contact opening comprising:

• electrically insulating one of first and second conductive plugs formed over a substrate with material comprising a first material, the plugs having respective plug tops formed above the substrate, while leaving at least a portion of the top of the other of the plugs outwardly exposed;
• forming a second material over both of the plug tops, the second material being different from the first material;
• and
• selectively removing second material over the other of the plugs relative to the first material sufficiently to form a contact opening thereover.

A method of forming a contact opening comprising:

• forming a conductive plug over each of a pair of node locations on a substrate, the conductive plugs projecting away from the substrate different distances and terminating proximate respective conductive plug tops;
• encapsulating a furthestmost projecting of the two conductive plugs with a first encapsulating material, the encapsulating covering the furthermost projecting conductive plug top and a plug portion proximate the top with first encapsulating material;
• forming a second material which is different from the first material over the substrate including the two projecting plugs;
• and
• selectively etching the second material relative to the first material sufficiently to form a contact opening over and expose the non-furthermost projecting of the two conductive plugs.

A method of forming dynamic random access memory circuitry comprising:

• forming conductive plugs between, and on each side of two conductive lines formed on a substrate, the plugs formed on each side being formed away from the conductive plug formed between the lines, the conductive plug formed between the conductive lines providing a bit line contact plug having an at least partially exposed top portion;
• encapsulating the at least partially exposed top portion with a first insulating material;
• and
• forming a layer of second insulating material over the substrate, the second insulating material being different from the first insulating material.

A method of forming dynamic random access memory circuitry comprising:

• forming an insulative layer of material over two spaced-apart conductive lines formed over a substrate, the conductive lines defining three substrate node locations;
• forming openings through the insulative layer over the three substrate node locations;
• forming electrically conductive material over the individual node locations and electrically isolated within the openings, the conductive material projecting away from the substrate, conductive material within one of the openings having a portion which is outwardly exposed;
• forming a first insulating material over and entirely covering the conductive material outwardly exposed portion;
• forming a second insulating material over the first insulating material which is different from the first material;
• selectively etching the second insulating material relative to the first insulating material sufficiently to form capacitor containers over and to expose conductive material not within the one opening;
• and
• forming capacitors received by the capacitor containers.

A method of forming a contact opening comprising:

• forming first and second conductive polysilicon plugs over a semiconductive substrate, the plugs projecting away from the substrate and toward respective plug tops;
• electrically insulating one of the plugs with material comprising a first material, while leaving at least a portion of the top of the other of the plugs outwardly exposed;
• forming a second material over both of the plug tops, the second material being different from the first material;
• and
• selectively removing second material over the other of the plugs relative to the first material sufficiently to form a contact opening thereover.