Fabricating method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYumiko Ohshima, Naoko Yamaguchi
Life of this patent
Estimating the term…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorsYumiko Ohshima, Naoko Yamaguchi
Estimating the term…
According to a fabricating method of the present invention, a cap shaped cover plate having a concaved portion on the inner surface is mounted on the rear surface of a semiconductor chip. After solder bumps are formed on a connecting pad of a wiring substrate, a fluid resin layer is formed on the bump formed surface. Thereafter, the semiconductor chip with the cover plate adhered is mounted with a face down on the resin layer formed surface of the wiring substrate. The solder bumps on the chip side and the solder bumps on the substrate side are contacted. At that time, the peripheral portion of the cover plate is contacted and adhered to the wiring substrate. Thereafter, while the bumps on the chip side and the bumps on the substrate side are being heated, melted, and connected, the fluid resin layer on the wiring substrate is hardened. Thus, the space between the semiconductor chip and the wiring substrate (namely, the height of the bumps) is controlled to a predetermined value. As a result, a semiconductor device having a flip-chip bonded portion with high reliability can be fabricated with simplified steps and high yield.
A fabricating method of a semiconductor device, comprising the steps of:
A fabricating method of a semiconductor device, comprising the steps of:
A fabricating method of a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.