Back to results
US 6,485,996 B2Granted
Method of making wafer having top and bottom emitting vertical-cavity lasers
AssigneeLucent Technologies Inc.
InventorsLeo Maria Chirovsky, John Edward Cunningham, Keith Wayne Goossen, Sanghee Park Hui, Betty Jyue Tseng
Life of this patent
Estimating the term…
Abstract
A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.
Claims14
A method of making wafer including a plurality of vertical-cavity surface emitting lasers (VCSELs) comprising the steps of:
- forming said plurality of VCSELs, each VCSEL including a top mirror and a bottom mirror having approximately the same reflectivity, and
- for a large fraction of said plurality of VCSELs, depositing a metal reflecting cap on the top mirror to thereby form substrate-side emitting VCSELs.
Dependencies are inferred from the claim text.