MRAM sense layer isolation
AssigneeMicron Technology, Inc.
InventorKaren Signorini
Life of this patent
Estimating the term…
Abstract
A process for forming an MRAM element. The process comprises patterning a globally deposited sense layer and then forming a spacer about the patterned sense layer so as to cover the lateral edges of the patterned sense layer. Subsequently, a globally deposited tunnel layer and fixed layer are patterned so as to define the MRAM element. Preferably, the pinned layer is patterned such that the outer lateral edges of the pinned layer is displaced in a direction parallel to the substrate from the lateral edges of the patterned sensed layer thereby reducing coupling effects between the two layers. Moreover, the use of a spacer during the process further inhibits shorting between the sense layer and the pinned layer during patterning of the pinned layer.
Claims27
A process for forming a magnetic memory element, the process comprising:
- forming a first magnetic layer on a substrate;
- forming a junction layer on the first magnetic layer;
- forming a second magnetic layer on the junction layer wherein the first and second magnetic layers are selected so as to have a programmable differential magnetic field therebetween;
- forming a spacer about the second magnetic layer;
- and
- patterning the first magnetic layer, wherein the spacer inhibits contact between the first and second magnetic layers during patterning of the first magnetic layer.
A process for forming an MRAM, the process comprising:
- forming a pinned layer, tunnel layer and a sense layer on a region of a substrate such that the tunnel layer is interposed between the sense layer and the pinned layer;
- patterning the sense layer such that the sense layer has an area less than the region of the substrate;
- shielding the sense layer subsequent to patterning the sense layer;
- and
- patterning the pinned layer while the sense layer is shielded, wherein the pinned layer is patterned such that the lateral edges of the pinned layer are offset from the lateral edges of the sense layer in a direction that is parallel to the plane of the substrate to thereby reduce magnetic coupling between the pinned layer and the sense layer.
An MRAM device comprising:
- a substrate;
- a first patterned magnetic layer on the substrate having a first magnetic characteristic, wherein the first patterned magnetic layer is patterned so as to have lateral edges positioned at a first lateral position on the substrate;
- and
- a second patterned magnetic layer having a second magnetic characteristic positioned with respect to the first magnetic layer such that the differential magnetic characteristic between the first and second patterned magnetic layer can be varied by the application of an external magnetic field thereby altering the combined magnetic characteristic of the first and second patterned magnetic layers and wherein the second magnetic layer is patterned so as to have lateral edges positioned at a second lateral position on the substrate that is offset from the first lateral position such that magnetic coupling between the first and second patterned magnetic layers is reduced.
Dependencies are inferred from the claim text.