Exposure apparatus and method
AssigneeHitachi, Ltd.
InventorsMinori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
Life of this patent
Estimating the term…
Abstract
A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.
Claims23
A production method of a semiconductor device, comprising the steps of:
- emitting an excimer laser from a light source;
- illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots;
- exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask in accordance with the pattern of the mask;
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
A production method of a semiconductor device, comprising the steps of:
- emitting an excimer laser from a light source;
- illuminating a mask having a phase shifter with the excimer laser emitted from the light source and passed through a filter so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots;
- exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask in accordance with a pattern of the mask;
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so as to have a line width at a portion thereof which is less than 0.2 μm.
A production method of a semiconductor device, comprising the steps of:
- exposing a resist on a substrate of the semiconductor device with an excimer laser emitted from a light source using a KrF gas and passed through a filter and a mask so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots;
- and
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so that a line width of the pattern formed on the substrate of the semiconductor device is less than 0.2 μm at a portion thereof.
A production method of a semiconductor device, comprising the steps of:
- emitting an excimer laser from a light source;
- forming the excimer laser as a ring-like shape divided in time into plural numbers;
- illuminating a pattern on a mask with the ring-like shape excimer laser;
- exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask in accordance with the pattern on the mask;
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
A production method of a semiconductor device, comprising the steps of:
- emitting an excimer laser from a light source;
- shaping the excimer laser in a ring-like shape divided in time into plural numbers by scanning the excimer laser;
- illuminating a pattern on a mask with the ring-like shaped excimer laser;
- exposing a resist on a substrate of the semiconductor device with the excimer laser passed through the mask;
- and
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser.
A production method of a semiconductor device, comprising the steps of:
- illuminating a pattern on a mask with a ring-like shaped excimer laser divided in time into plural numbers;
- exposing a resist on a substr ate of the semiconductor device with the excimer laser passed through the mask;
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the excimer laser so that a line width at a portion thereof is less than 0.2 μm.
A production method of a semiconductor device, comprising the steps of:
- exposing a resist on a substrate of the semiconductor device using an excimer stepper having an excimer laser light source and a filter forming an excimer laser emitted from the excimer laser light source so that the excimer laser has a ring-like shape divided in time into plural numbers by a plurality of dots;
- and
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist on the substrate exposed by the excimer stepper.
A production method of a semiconductor device, comprising the steps of:
- illuminating a pattern on a mask with an exposure light having a ring-like shape divided in time into plural numbers by a plurality of dots;
- exposing a resist on a substrate of the semiconductor device with the exposure light passed through the mask;
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist exposed with the exposure light;
- and
- controlling the exposure light which exposes the resist is so as to provide a balance between a O-order diffraction light and a diffraction light from the mask.
A production method of a semiconductor device, comprising the steps of:
- exposing a resist on a substrate of the semiconductor substrate using an excimer stepper having an excimer laser light source and a filter;
- forming a pattern on the substrate of the semiconductor device in accordance with a pattern of the resist on the substrate exposed by the excimer stepper;
- wherein the resist is exposed with the excimer laser having a ring-like shape divided in time into plural numbers by a plurality of dots which passed through the filter and a mask, and, in the excimer laser exposure of the resist, a light intensity between O-order diffraction light and diffraction light from the mask is balanced.
Dependencies are inferred from the claim text.