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US 6,485,784 B1Granted
Precursors for growth of heterometal-oxide films by MOCVD
AssigneeQinetiq Limited
InventorsTimothy J Leedham, Peter J Wright, Anthony C Jones, Michael J Crosbie
Life of this patent
Estimating the term…
Abstract
Metalorganic precursors for deposition of strontium tantalum and strontium niobium oxides by MOCVD techniques have the formula Sr[M(OR1)6-xLx]2 wherein x is form 1 to 6; M is Ta or Nb; R1 is a straight or branched chain alkyl group; and L is an alkoxide group.
Claims40
A metalorganic precursor of the formula
- Sr[M(OR1)6-xLx]2
- wherein x is from 1 to 6;
- M is Ta or Nb;
- R1 is a straight or branched chain alkyl group;
- and
- L is an alkoxide group of the formula:
- wherein n is 0 or 1
- X is N or O
- R2 and R3 are the same or different and are straight or branched chain alkyl groups;
- and
- R4 is a straight or branched alkyl chain, optionally substituted with an amino, alkylamino or alkoxy group.
8 more elements
A method of depositing thin films of or containing strontium metal oxides using metalorganic precursors in an MOCVD (metalorganic chemical vapour deposition) technique, wherein the strontium metal oxide precursor has the formula
- Sr[M(OR1)6-xLx]2
- wherein x is from 1 to 6;
- M is Ta or Nb;
- R1 is a straight or branched chain alkyl group;
- and
- L is an alkoxide group of the formula:
- wherein n is 0 or 1
- X is N or O
- R2 and R3 are the same or different and are straight or branched chain alkyl groups;
- and
- R4 is a straight or branched alkyl chain, optionally substituted with an amino, alkylamino or alkoxy group.
8 more elements
Dependencies are inferred from the claim text.