Chemical vapor deposition system
AssigneeASML US, Inc.
InventorsRobert J. Bailey, Lisa H. Michael, Thomas E. Kane
Life of this patent
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AssigneeASML US, Inc.
InventorsRobert J. Bailey, Lisa H. Michael, Thomas E. Kane
Estimating the term…
A chemical vapor deposition (CVD) system is provided for processing a substrate 110. The system 100 includes a heated muffle 115, a chamber 120 having an injector assembly 130 for introducing chemical vapor to process the substrate 110, and a belt 105 for moving the substrate through the muffle and chamber. The belt 105 has an oxidation-resistant coating 175 to reduce formation of deposits thereon. The coating 175 is particularly useful for resisting formation of chromium oxides on belts made from a chromium-containing alloy. In one embodiment, the oxidation-resistant coating 175 comprises a securely-adhered oxide layer 185 that is substantially free of transition metals. Preferably, the oxidation-resistant coating 175 comprises aluminum oxide. More preferably, the coating 175 comprises an aluminum oxide layer 185 securely adhered over a nickel aluminide layer 180.
A method of operating a chemical vapor deposition system to deposit a film on a surface of a substrate, the method comprising steps of:
A method of operating a chemical vapor deposition system to deposit a film on a surface of a substrate, the method comprising steps of:
Dependencies are inferred from the claim text.