Method of fabricating self-aligned contacts
AssigneeVanguard International Semiconductor Corporation
InventorsMeng-Chang Liu, Shea-Jue Wang
Life of this patent
Estimating the term…
Abstract
A process for producing a self-aligned contact comprises the steps of forming leads on a substrate, forming an etching stop layer on the leads by depositing, then forming a sacrificed oxide layer; after the structure of the leads is defined, a spacer is formed on both sides of the structure; a sacrificed oxide layer is formed, allowing the spacer to protrude in the form of horn. Next, a dielectric layer having a flat upper surface is deposited on the substrate and the structure of leads, a contact hole being formed between the leads so as to connect the substrate, a conductive material being filled in the contact hole to form a plug.
Claims20
A method of fabricating a self-aligned contact, comprising:
- providing a substrate;
- sequentially forming a conductive layer, an etching stop layer and a sacrificed oxide layer on the substrate;
- forming a patterned photoresist layer on the sacrificed oxide layer;
- forming a stack structure by performing a process of anisotropic etching sequentially on the exposed sacrificed oxide layer, the etching stop layer, and the conductive layer;
- removing the photoresist layer;
- forming a spacer on a sidewall of the stack structure;
- removing the etched sacrificed oxide layer, such that the spacer protrudes above an upper surface of the etching stop layer;
- forming a dielectric layer on the substrate and said stack structure, wherein the dielectric layer has a flat upper surface;
- removing a part of the dielectric layer to form a contact hole which exposes a part of said substrate;
- and
- forming a conductive plug in the contact hole.
A method of fabricating a self-aligned contact, comprising:
- providing a substrate having a stack structure of the conductor lines formed by stacking in turns a conductive layer, an etching stop layer and a sacrificed oxide layer thereon;
- forming a spacer on a sidewall of the stack structure;
- removing the sacrificed oxide layer, such that the spacer protrudes above an upper surface of the etching stop layer;
- forming a dielectric layer having a flat upper surface over said substrate and said stack structure;
- defining said dielectric layer to form a contact hole to connect said substrate;
- forming a conductive layer on said dielectric layer and fill said contact hole;
- and
- etching back said conduct material, and forming a conductive plug in said contact hole.
Dependencies are inferred from the claim text.