US 6,485,602 B2 · Plasma processing apparatus

Abstract

The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

Claims7

Dependent claims

A plasma processing apparatus for applying specified plasma processing to a processing object, comprising:

first and second electrodes arranged in parallel in a processing chamber;
a first high-frequency power supply for applying first high-frequency power to said first electrode via a first power supply line;
a second high-frequency power supply for applying second high-frequency power to said second electrode via a second power supply line;
a first filter circuit for attenuating said second high-frequency power flowing through said first power supply line;
and
a second filter circuit for attenuating said first high-frequency power flowing through said second power supply line,
wherein said first filter circuit includes a variable capacitor for varying a circuit constant in order to increase a resonance point from an optimum resonance point most attenuating said second high-frequency power and for decreasing a sputter rate for a wall surface of said processing chamber during plasma occurrence.

4 more elements

A plasma processing apparatus for applying specified plasma processing to a processing object, comprising:

first and second electrodes arranged in parallel in a processing chamber so that they face each other;
a first high-frequency power supply for applying first high-frequency power to said first electrode via a first power supply line;
a second high-frequency power supply for applying second high-frequency power to said second electrode via a second power supply line;
a first filter circuit for decreasing a sputter rate for a wall surface of said processing chamber during plasma occurrence by having a variable capacitor for varying a circuit constant so that a resonance point becomes greater than an optimum resonance point most attenuating said second high-frequency power flowing through the first power supply line;
a second filter circuit for attenuating said first high-frequency power flowing through said second power supply line;
and
a third filter circuit for attenuating a second high-frequency power flowing through said first power supply line, wherein said third filter circuit is provided adjacent to said first filter circuit.

4 more elements

Dependencies are inferred from the claim text.

Plasma processing apparatus

Life of this patent

Plasma processing apparatus

Life of this patent

Abstract

Claims7