Method for removing coating bead at wafer flat edge
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Chi Huang, Chi-Shen Lo
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Abstract
The present invention provides a method for removing a coating layer of SOG or photoresist from a wafer flat side on a wafer by first injecting a flow of a cleaning solution at the bottom surface of the wafer at a location adjacent to the edge of the wafer, and then rotating the wafer at a rotational speed sufficiently high so as to cause the cleaning solution being pulled from the bottom side to the top side of the wafer by flowing around the edge to remove the coating layer covering the unintended area on the top surface of the wafer.
Claims16
A method for removing a coating layer from an undesirable area on a wafer comprising the steps of:
- providing a wafer having a top surface and a bottom surface, said top surface having a coating layer covering an undesirable area along the edge of said wafer,
- spinning said wafer at a predetermined rotational speed, and
- injecting a flow of a cleaning solution comprises C5H10O3 and C3H8O at the bottom surface of the wafer adjacent to the edge of the wafer, whereby said predetermined rotational speed of the wafer pulls said cleaning solution from the bottom surface of the wafer to the top surface of the wafer to remove the coating layer at the undesirable area.
A method for removing a coating layer from the wafer top side comprising the steps of:
- providing a wafer having a top and a bottom surface, said top surface having a coating layer deposited thereon covering an undesirable area,
- injecting a flow of a cleaning solution comprising C5H10O3 and C3H8O on the bottom surface of the wafer at a location adjacent to the edge of the wafer, and
- rotating the wafer at a rotational speed that is sufficiently high to cause the cleaning solution to be pulled from the bottom to the top surface of the wafer while it is flowing around the edge thus removing the coating layer covering the undesirable area on said top surface of the wafer.
A method for removing a coating layer of spin-on-glass from the wafer flat side comprising the steps of:
- providing a wafer having a top and a bottom surface, said top surface has a spin-on-glass (SOG) layer deposited thereon covering an undesirable area,
- injecting a flow of a cleaning solution on the bottom surface of the wafer at a location adjacent to the edge of the wafer, said cleaning solution comprises between about 20 vol. % and about 80 vol. % of C5H10O3, between about 80 vol. % and about 20 vol. % of C3H8O, and
- rotating the wafer at a rotational speed sufficiently high so as to cause the cleaning solution being pulled from the bottom surface to the top surface of the wafer by flowing around the wafer edge to remove the SOG layer covering the undesirable area on said top surface of the wafer.
Dependencies are inferred from the claim text.