Use of pulsed grounding source in a plasma reactor
AssigneeMicron Technology, Inc.
InventorsChuck E. Hedberg, Kevin G. Donohoe
Life of this patent
Estimating the term…
Abstract
A method and apparatus for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during the operation of a plasma reactor.
Claims77
A method of operating a plasma reactor comprising:
- providing a plasma reactor including a pedestal for supporting a semiconductor substrate and an AC power bias source in electrical communication with said pedestal;
- providing an electrical path from ground to said pedestal including a switch, said switch being operable between an open position and a closed position;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- and
- opening said switch during said high voltage phase of said electrical signal after closing said switch.
A method of forming an opening for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
- generating a plasma above said semiconductor substrate;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- and
- opening said switch during said high voltage phase of said electrical signal after closing said switch.
A method of forming a feature for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
- generating a plasma above said semiconductor substrate;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- and
- opening said switch during said high voltage phase of said electrical signal after closing said switch.
A method of forming a feature for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
- providing an atmosphere of CHF3 having a flow rate of approximately 22 sccm and a pressure level of approximately 20 mtorr;
- generating a plasma above said semiconductor substrate at a power level of approximately 800 watts;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase at a frequency in a range of 1.7+/−0.2 MHZ;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- and
- opening said switch during said high voltage phase of said electrical signal after closing said switch.
A method of forming a high aspect ratio opening for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
- generating a plasma above said semiconductor substrate;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- and
- opening said switch during said high voltage phase of said electrical signal after closing said switch.
A method of forming a high aspect ratio feature for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
- generating a plasma above said semiconductor substrate;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- and
- opening said switch during said high voltage phase of said electrical signal after closing said switch.
A method of forming a high aspect ratio feature for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer;
- providing an atmosphere of CHF3 having a flow rate of approximately 22 sccm and a pressure level of approximately 20 mtorr;
- generating a plasma above said semiconductor substrate at a power level of approximately 800 watts;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase at a frequency in the range of 1.7+/−0.2 MHZ;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- and
- opening said switch during said high voltage phase of said electrical signal after closing said switch.
A method of forming an opening for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer, said photoresist layer patterned on said material layer having at least one aperture therein;
- generating a plasma above said semiconductor substrate;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- forming at least a portion of an opening in said semiconductor substrate;
- opening said switch during said high voltage phase of said electrical signal after closing said switch;
- and
- forming at least another portion of an opening in said semiconductor substrate.
A method of forming a high aspect ratio opening for a semiconductor device utilizing a plasma reactor chamber including a pedestal for supporting a semiconductor substrate and an AC power source in electrical communication with said pedestal, said pedestal including a switch in electrical communication therewith for opening and closing an electrical path to ground, said method comprising:
- placing a semiconductor substrate on said pedestal, said semiconductor substrate having a material layer thereover and a photoresist layer patterned on said material layer, said photoresist layer patterned on said material layer having at least one aperture therein;
- generating a plasma above said semiconductor substrate;
- delivering an electrical signal to said pedestal from said AC power source, a voltage of said electrical signal oscillating between a high voltage phase and a low voltage phase;
- closing said switch to ground said pedestal during said high voltage phase of said electrical signal;
- forming at least a portion of an opening in said semiconductor substrate;
- opening said switch during said high voltage phase of said electrical signal after closing said switch;
- and
- forming at least another portion of said opening in said semiconductor substrate.
Dependencies are inferred from the claim text.