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US 6,482,331 B2Granted
Method for preventing contamination in a plasma process chamber
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Liang Lu, Yung-Chih Yao
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Abstract
A method for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100° C. and about 150° C.
Claims10
A method for preventing contamination in a plasma process chamber comprising the steps of:
- providing a plasma process chamber equipped with heating means and a top chamber wall;
- conducting a plasma process in said plasma process chamber and generating contaminating particles adhered to an interior surface of said top chamber wall;
- and
- turning off said heating means and simultaneously flowing a gas heated to at least 100° C. onto an exterior surface of said top chamber wall for preventing said contaminating particles from falling off said interior surface of the top chamber wall.
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Dependencies are inferred from the claim text.